Semiconductor device structure and manufacturing process thereof

ABSTRACT

A semiconductor device structure for sensing an incident light includes a substrate, a passivation layer and a wiring structure. The substrate has a device embedded therein. The passivation layer is disposed on the substrate, where the passivation layer has a first side and a second side opposite to the first side, the first side of the passivation layer includes microstructures disposed on the substrate, and the second side of the passivation layer is a continuous flat plane, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed on the substrate, where the writing structure includes at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected, where the substrate is located between the passivation layer and the wiring structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 15/256,628, filed onSep. 5, 2016, now allowed. The entirety of the above-mentioned patentapplication is hereby incorporated by reference herein and made a partof this specification.

BACKGROUND

Semiconductor image sensors are operated to sense light. Typically, thesemiconductor image sensors include complementarymetal-oxide-semiconductor (CMOS) image sensors (CIS) and charge-coupleddevice (CCD) sensors, which are widely used in various applications suchas digital still camera (DSC), mobile phone camera, digital video (DV),digital video recorder (DVR), optical sensor (proximity sensor, ambientlight sensor heart rate sensor, and optical sensing element (opticaltransceiver) applications. These semiconductor image sensors utilizesingle or an array of image/optical signal sensor elements, eachimage/optical signal sensor element including a photodiode and otherelements, to absorb light and convert the sensed light into digital dataor electrical signals. Thus, it is important for semiconductor imagesensors to be able to have good light absorption abilities.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 to FIG. 6 are schematic cross sectional views of various stagesin a manufacturing process of a semiconductor device structure accordingto some exemplary embodiments of the present disclosure.

FIG. 7 is an enlarged partial schematic cross sectional view of apassivation layer of a semiconductor device structure of FIG. 6.

FIG. 8 is a tilted top view of the passivation layer of FIG. 7.

FIG. 9 is an enlarged partial schematic cross sectional view of thepassivation layer of FIG. 7.

FIG. 10 is an enlarged schematic cross sectional view of a passivationlayer of a semiconductor device structure according to some exemplaryembodiments of the present disclosure.

FIG. 11 is an enlarged partial schematic cross sectional view of aplurality of passivation layers of a semiconductor device structureaccording to some exemplary embodiments of the present disclosure.

FIG. 12 is an enlarged partial schematic cross sectional view of aplurality of passivation layers of a semiconductor device structureaccording to some exemplary embodiments of the present disclosure.

FIG. 13 is a schematic cross section view of a semiconductor devicestructure according to some exemplary embodiments of the presentdisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 to FIG. 6 are schematic cross sectional views of various stagesin a manufacturing process of a semiconductor device structure accordingto some exemplary embodiments of the present disclosure. Referring toFIG. 1, in some embodiments, a substrate 110 is provided. The substrate110 includes a surface 110 a. The substrate 110 is, for example, asemiconductor substrate. The substrate 110 may include, for example,silicon, strained silicon, silicon alloy, silicon carbide,silicon-germanium, silicon-germanium carbide, germanium, a germaniumalloy, germanium-arsenic, indium-arsenic, group III-V semiconductors,organic plastic substrates, glass or a combination thereof. In someembodiments, the substrate 110 may be a wafer and may include dopedregions, such as p-type regions, n-type regions or a combinationthereof.

Referring to FIG. 2, one or more devices 112 may be formed at thesurface 110 a of the substrate 110. The devices 112 may be, for example,light sensing devices. In some embodiments, the devices 112 are formedin the substrate 110 (not shown). In FIG. 2, the devices 112 are shownto be formed on the surface 110 a of the substrate 110. In otherembodiments, the devices 112 are not on the surface 110 a, but areformed in the substrate 110, and do not protrude out of the substrate.The devices 112 may include, for example, a pixel, a single-photonavalanche diode (SPAD), a photo diode (PD), a photo transistor, a timeof flight (ToF) camera, a photo gate, a pinned photo diode, or acombination thereof. In some embodiments, additional semiconductordevices with different functions or integrated circuits may also beincluded on the substrate 110 or in the substrate 110. The scope of thedisclosure is not limited to the embodiments or drawings describedtherein. Furthermore, the structure may only require one light sensingdevice 112 or an array of multiple light sensing devices 112. The numberof light sensing devices 112 or configuration of multiple light sensingdevices 112 may be adjusted according to user requirements.

Referring to FIG. 3, in some embodiments, a wiring structure 120 isformed on the surface 110 a of the substrate 110. In certainembodiments, the wiring structure 120 includes one or more contacts 122connected to the devices 112 and metal interconnection patterns 124,126, 128. In some embodiments, the contact(s) 122 is formed within thedielectric layer 121, and the metal interconnection patterns 124, 126,128 are fabricated with one or more interlayer dielectric layers 123. Insome embodiments, the dielectric layer 121 may include a pre-metaldielectric layer, and the dielectric layer 123 may include one or moreinter dielectric layers. The materials of the metal interconnectionpatterns 124, 126, 128 include, for example, aluminum, copper, copperalloys or any other suitable metal materials. The wiring structure 120including the dielectric layers 121, 123, the contact(s) 122 and themetal interconnection patterns 124, 126, 128 may be formed in the backend of line processes.

Referring to FIG. 4, a passivation layer 130 is formed on the wiringstructure 120. The passivation layer 130 having a top surface 130 a isdeposited over the wiring structure 120. In some embodiments, thematerial of the passivation layer 130 includes, for example, siliconcarbide (SiC), SiCN, silicon nitride, silicon oxynitride, silicon oxide,a low-k dielectric material or combinations thereof, but is not limitedby the above-mentioned materials. In some embodiments, the material ofthe passivation layer 130 is light transmissive, with an index ofrefraction greater than or equal to 2.0. The material of the passivationlayer 130 may be selected according to the requirements or design of theproducts. In other embodiments, the passivation layer 130 is formed on abackside surface of the substrate 110 opposite to the surface 110 a (notshown).

Referring to FIG. 5 and FIG. 6, in certain embodiments, aphotolithography process and an etching process are performed towardsthe passivation layer 130 to form a plurality of microstructures 130 b.In some embodiments, a photoresist pattern 200 formed on the surface 130a of the passivation layer 130. In some embodiments, the photoresistpattern 200 is formed by forming a photoresist layer through spincoating and then patterning by projecting light through a photo mask(not shown).

Referring to FIG. 6, in some embodiments, using the photoresist pattern200 as the mask, the etching process is performed to remove a portion ofthe passivation layer 130 from the passivation layer 130 so as to formthe microstructures 130 b. In some examples, performing the etchingprocess includes performing at least one dry etching process and/or awet etching process. Herein, a semiconductor device structure 100 isformed. In some embodiments, the semiconductor device structure 100includes one or more CMOS image sensor devices, which are able to senseincident light or signals. Of course, the semiconductor device structure100 may include other suitable light sensor devices for sensing incidentlight at different wavelengths. Although in certain embodiments theetching process is performed to form the microstructures 130 b asdescribed above, the microstructures 130 b may be formed using a laserablation technique or even mechanical ablation technology in some otherembodiments. In other embodiments, the passivation layer 130 formed on abackside surface of the substrate 110 opposite to the surface 110 a (notshown) also performs the same steps in FIG. 5 and FIG. 6 to form themicrostructures 130 b. When formed on the backside surface, thestructure may be suitable for backside illumination. When formed on thesurface 110 a of the substrate 110, the structure may be suitable forfront side illumination.

Furthermore, in some embodiments, the microstructures 130 b are formedto cover substantially the whole area of the passivation layer 130. Insome embodiments, the semiconductor device structure 100 may furtherinclude an array of micro lens (not shown) disposed over themicrostructures 130 b. In other embodiments, the microstructures 130 bare formed only at certain regions or sections of the passivation layer130. In the case that the microstructures 130 b formed are only at oneor more regions of the passivation layer 130, the region(s) formed withthe microstructures 130 b is a light sensing region with light sensingdevices below the light sensing region. That is to say, themicrostructures 130 b are located in the light sensing region above thedevices 112 (including light sensing devices) and are adapted to enhancethe light absorption. In some embodiments, when the microstructures 130b are located in the light sensing regions, the micro lens (not shown)may be disposed above and adjacent to the microstructures 130 b or onthe microstructures 130 b. In some embodiments, the layout of the wiringstructure 120 or the patterns of the metal interconnection patterns 124,126, 128 are arranged aside of the light sensing region(s) or away fromthe light sensing region(s) (from the top view), and are not directlyabove the devices 112, so as not to obstruct light from reaching thelight sensing regions.

FIG. 7 is an enlarged schematic cross sectional view of a passivationlayer of a semiconductor device structure of FIG. 6. FIG. 8 is a tiltedtop view of the passivation layer of FIG. 7. Referring to FIG. 7 to FIG.8, in some embodiments, each microstructure 130 b is formed with across-section shape of, for example, a triangle. However, in otherembodiments, a cross-section shape of each microstructure 130 b is, forexample, a trapezoid or arc, such as semi-circle or semi-ellipse (notshown). It is not limited that each of the microstructures has to haveexactly the same shape and there may be certain variations of shapesamong the microstructures. Furthermore, in certain embodiments, theshape of the microstructure 130 b is a cone shape as shown in FIG. 8.The shape of the microstructure 130 b may be a right pyramid shape, atriangular pyramid shape or any other suitable shape. FIG. 8 is apartial schematic view of the passivation layer 130. From FIG. 8, themicrostructures 130 b are formed regularly with the same shape,dimension and pitch and are arranged in an array. In some otherembodiments, the microstructures 130 b may be formed with differentshapes, dimensions, pitches or patterns. The arrangement of themicrostructures 130 b depends on user requirements or product designs.In addition, as seen in FIG. 7 to FIG. 8, the formed microstructures 130b do not extend through the entire thickness of the passivation layer130. The ratio of the height of the microstructures 130 b to thethickness of the remained passivation layer 130 that is not formed intoparts of the microstructures 130 b is adjustable. In other embodiments,the microstructures 130 b can be formed extending through the entirethickness of the passivation layer 130 such that the height of themicrostructures 130 b is substantially equivalent to the entirethickness or height of the passivation layer 130. The shape,configuration or dimension of the microstructures 130 b may be changeddepending on, for example, the material of the passivation layer 130 orthe wavelength(s) of incident light that is to be detected or sensed.

Further referring to FIG. 7 to FIG. 8, in some embodiments, themicrostructures 130 b are formed with the arrangement that any two mostadjacent ones of the microstructures 130 b are abutting with each otherand the peripheries of the bases 130 c of adjacent microstructures 130 bare in direct contact with each other. The microstructure 130 b has aheight h1, and a pitch w1 between any two most adjacent ones of themicrostructures 130 b. In some embodiments, the height h1 is between100λ and λ/100, and the pitch w1 is between 100λ and λ/100, λrepresenting a wavelength of an incident light 140. In some embodiments,the height h1 is greater than λ/2.5, and the pitch w1 is greater thanλ/2. With the microstructures 130 b, a larger top surface area forreceiving the incident light 140 is provided for multiple reflection,and an incident angle of the incident light 140 projected to the surface131 of the microstructures 130 b is smaller than that of the incidentlight 140 projected to a flat surface of the passivation layer 130, sothat most of the incident light 140 can pass through the microstructures130 to be sensed by the devices 112. The reflection loss of the incidentlight 140 is reduced because the incident light 140 is multiplyreflected and refracted by the microstructures 130 b and the reflectionloss ratio keeps decreasing after multiple reflections and refractionswithin the microstructures 130 b. Hence, the absorption ratio of theincident light 140 is significantly raised. Furthermore, the light beamof the incident light 140 is narrowed by the designed multiplereflections from the microstructures 130 b.

FIG. 9 is an enlarged partial schematic cross sectional view of thepassivation layer of FIG. 7. Specifically, as seen in FIG. 9, in someembodiments, the incident light 140 is incident on the microstructure130 b so that part of the incident light 140 is refracted into andpasses through the microstructure 130 b and part of the incident light140 is reflected off the microstructure 130 b to become a firstreflected light 142. The first reflected light 142 is then incident onan adjacent microstructure 130 b such that a portion of the firstreflected light 142 is refracted into and passes through the adjacentmicrostructure 130 b and a portion of the first reflected light 142 isreflected off the adjacent microstructure 130 b to become a secondreflected light 144. The second reflected light 144 is then incident onthe same microstructure 130 b the incident light 140 was incident to,such that a portion of the second reflected light 144 is refracted intoand passes through the microstructure 130 b and a portion of the secondreflected light 144 is reflected off the microstructure 130 b to becomea third reflected light 146. The third reflected light 146 is reflectedin a direction away from the microstructures 130 b such that the lightis lost. In certain embodiments, the incident light 140 refractedmultiple times into the microstructures 130 b is absorbed by theunderlying light sensing device. In some embodiments, the incident light140 is also reflected multiple times to become the first, second andthird reflected light 142, 144, 146 with decreasing reflection ratios.In exemplary embodiments, when the microstructures 130 b are made ofsilicon nitride (refraction index of 2.4), the incident light 140 fromair (refraction index of 1.0) is also reflected multiple times to becomethe first, second and third reflected light 142, 144, 146 withreflection ratios of 0.169 (16.9%), 0.029 (2.9%) and 0.005 (5%). As theincident light 140 is reflected multiple times, the amount of light lostis reduced to only 5% of the third reflected light 146, which issignificantly lower than that of the first reflected light 142 (if theincident light 140 was only refracted and reflected once and lost). Thatis to say, only 5% of the incident light 140 was lost, and 95% of theincident light 140 passes through the microstructures 130 b of thepassivation layer 130 to be sensed or absorbed by the devices 112. Thereflection paths of the incident light 140, the first reflected light142, the second reflected light 144, and the third reflected light 146described in the drawings are exemplary, as the reflection/refractionpaths and the transmission/reflection rates of the light may varydepending on the incident angle and the indexes of refraction of thematerials at the interface (reflection law and Snell's law). Thematerial of the microstructures 130 b and the incident angle of theincident light 140 affect the light reflection/refraction paths. Theaforementioned light path is merely exemplary to show that themicrostructures 130 b allow the absorption ratio of the incident light140 to be significantly raised. In addition, through the microstructures130 b the beam width of the incident light 140 is also narrowed.

FIG. 10 is an enlarged schematic cross sectional view of a passivationlayer of a semiconductor device structure according to some exemplaryembodiments of the present disclosure. Referring to FIG. 10, thepassivation layer 230 with the microstructures 230 b is adapted to beformed on the semiconductor device structure 100 in FIG. 6. Thedifference between the passivation layer 230 and the passivation layer130 in FIG. 6 is that in the passivation layer 230, in the operation offorming the microstructures 230 b, the bases 230 c of any two mostadjacent ones of the microstructures 230 b are separated from eachother. That is to say, the bases 230 c of the microstructures 230 b arenot adjoined. As shown in FIG. 10, each microstructure 230 b has aheight h2, and a pitch w2 is formed between any two adjacent ones of themicrostructures 230 b. In some embodiments, the height h2 is between100λ and λ/100, and the pitch w2 is between 100λ and λ/100. In someembodiments, the height h2 is greater than λ/2.5, and the pitch w2 isgreater than λ/2. The microstructures 230 b are not adjoined based onuser requirements. Similar to the microstructures 130 b in FIG. 7, themicrostructures 230 b in FIG. 10 also allow an incident light (notshown) to be multiply refracted, and then pass through to be absorbed bythe devices 112. Hence, the absorption ratio of the incident light issignificantly raised. In addition, through the microstructures 230 b thebeam width of the incident light is also narrowed. An incident light isnot shown in FIG. 10 as a similar light path can be referred to in FIG.7.

FIG. 11 is an enlarged partial schematic cross sectional view of aplurality of passivation layers of a semiconductor device structureaccording to some exemplary embodiments of the present disclosure.Referring to FIG. 11, FIG. 11 shows a plurality of passivation layers130 stacked on top of each other. The passivation layers 130 are thesame as the passivation layer 130 shown in FIG. 6 and FIG. 7. That is tosay, in the embodiment of FIG. 11, additional passivation layers 130 areformed on the single passivation layer 130 shown in FIG. 6, and theembodiment is applicable to the semiconductor device structure shown inFIG. 6. FIG. 11 only shows two of the microstructures 130 b on each ofthe passivation layers 130 as a partial schematic view. As seen in FIG.11, in some embodiments, a total of three passivation layers 130 withthe microstructures 130 b are shown. However, the disclosure is notlimited thereto, and the number of passivation layers 130 may beadjusted according to user requirements. The additional passivationlayers 130 are formed layer by layer similar to the description of theformation of the passivation layer 130 in FIG. 6. That is to say, thephotolithography process and the etching process are performed duringeach formation of the microstructures 130 b of the passivation layers130. The microstructures 130 b of one passivation layer 130 are formedfirst, and then another passivation layer 130 is deposited and patternedto form the microstructures 130 b on the additional passivation layer130. As seen in FIG. 11, in some embodiments, the microstructures 130 bof each passivation layer 130 are aligned with each other in a stackingdirection of the passivation layer 130. To be specific, as seen in FIG.11, the microstructures 130 b of each passivation layer 130 are alignedin a vertical direction. With this configuration, the microstructures130 b of the stacked passivation layers 130 allow an incident light 150to be multiply refracted, and then pass through to be absorbed by thedevices 112. Hence, the absorption ratio of the incident light 150 issignificantly raised. Specifically, similar to the light path of theincident light 140 in FIG. 7, the incident light 150 also reflected andrefracted multiple times as shown in the light path 150 a of theincident light 150. Furthermore, as the incident light 150 passesthrough the microstructures 130 b of the stacked passivation layers 130,the light beam of the incident light 150 is further narrowed such thatthe stacked passivation layers 130 are a stacked optical collimator.

FIG. 12 is an enlarged partial schematic cross sectional view of aplurality of passivation layers of a semiconductor device structureaccording to some exemplary embodiments of the present disclosure.Referring to FIG. 12, the embodiment of FIG. 12 is similar to theembodiment of FIG. 11, and the same description is not repeated herein.The difference between the embodiment of FIG. 12 and the embodiment ofFIG. 11 is that in the embodiment of FIG. 12, the microstructures 330 bof each passivation layer 330 are alternately aligned with each other ina stacking direction of the passivation layer 330. To be specific, asseen in FIG. 12, the microstructures 330 b of each passivation layer 330are alternately aligned in a vertical direction such that amicrostructure 330 b of a passivation layer 330 is between two adjacentmicrostructures 330 b in the above passivation layer 330. Similar to theembodiment of FIG. 11, the stacked passivation layers 330 of FIG. 12narrow an incident light beam (not shown) to be a stacked opticalcollimator. In the embodiments of FIG. 11 and FIG. 12, themicrostructures 230 b of FIG. 10 may also be applied. Furthermore, themicrostructures in FIG. 11 and FIG. 12 may be any suitable shape orarrangement on each passivation layer. The disclosure is not limitedthereto.

FIG. 13 is a schematic cross section view of a semiconductor devicestructure according to some exemplary embodiments of the presentdisclosure. Referring to FIG. 13, a semiconductor device structure 200is similar to the semiconductor device structure 100 in FIG. 6. Similarelements are referenced with the same reference numerals. The samedescription is not repeated herein. The difference is that thesemiconductor device structure 200 further includes an antireflectivelayer 160. The antireflective layer 160 is coated on the microstructures130 b after the microstructures 130 b are formed. The antireflectivelayer 160 further reduces that amount of light that is reflected. Thatis to say, the antireflective layer 160 improves the absorption ratio ofthe incident light, and reduces the amount of incident light lost toreflection. In the embodiments, of FIG. 11 and FIG. 12, theantireflective layer 160 may also be coated on the topmost passivationlayer 130, 230 of the stacked passivation layers 130, 230. Of course,the antireflective layer 160 may also be omitted is desired by the user.A material of the antireflective layer 160 is, for example, magnesiumfluoride fluoropolymers, or any other suitable material. In addition, inthe embodiments of FIGS. 10, 11, 12, and 13, the microstructures formedcan extend through the entire thickness of the passivation layer 130such that the height of the microstructures 130 b is the entirethickness or height of the passivation layer 130. The parameters of themicrostructures formed may depend on the material of the passivationlayer or the configuration of the semiconductor device structure.

According to some embodiments, a semiconductor device structure forsensing an incident light includes a substrate, a wiring structure, andat least one passivation layer. The substrate has a light sensingdevice. The at least one passivation layer is disposed above the wiringstructure. The at least one passivation layer includes a plurality ofmicrostructures disposed above the light sensing device, and each of themicrostructures has a cross-section in a shape of a triangle, trapezoidor arc. The wiring structure is disposed below the at least onepassivation layer.

According to some embodiments, a method for manufacturing asemiconductor device structure includes the following steps. A substratehaving a device is provided. A wiring structure is formed on thesubstrate. A passivation layer is formed on the wiring structure. Aplurality of microstructures are formed from the passivation layer, andeach of the microstructures has a cross-section in a shape of atriangle, trapezoid or arc.

According to some embodiments, a method for manufacturing asemiconductor device structure includes the following steps. A substratehaving a device is provided. A wiring structure is formed on thesubstrate. A plurality of passivation layers are formed on the wiringstructure. A plurality of microstructures are formed from at least twopassivation layers of the passivation layers. The microstructures formedfrom the at least two passivation layers are stacked on top of eachother. Each of the microstructures has a cross-section in a shape of atriangle, trapezoid or arc.

According to some embodiments, a semiconductor device structure forsensing an incident light includes a substrate, a passivation layer anda wiring structure. The substrate has a device embedded therein. Thepassivation layer is disposed on the substrate, wherein the passivationlayer has a first side and a second side opposite to the first side, thefirst side of the passivation layer includes a plurality ofmicrostructures disposed on the substrate, and the second side of thepassivation layer is a continuous flat plane, wherein each of themicrostructures has a cross-section in a shape of a triangle, trapezoidor arc. The wiring structure is disposed on the substrate, wherein thewriting structure includes at least one contact and metalinterconnection patterns respectively formed in different dielectriclayers, and the at least one contact and the metal interconnectionpatterns are electrically connected, wherein the substrate is locatedbetween the passivation layer and the wiring structure.

According to some embodiments, a semiconductor device structure forsensing an incident light includes a substrate, a passivation layer anda wiring structure. The substrate has at least one light sensing regionwith a light sensing device formed therein. The passivation layer isdisposed on the substrate, wherein a first side of the passivation layerincludes a plurality of microstructures covering the substrate andoverlapped with the at least one light sensing region, and a second sideof the passivation layer is a continuous flat plane, wherein the firstside is opposite to the second side, and each of the microstructures hasa cross-section in a shape of a triangle, trapezoid or arc. The wiringstructure is disposed on the substrate, wherein the writing structureincludes at least one contact and metal interconnection patternsrespectively formed in different dielectric layers, and the at least onecontact and the metal interconnection patterns are electricallyconnected, wherein the substrate is located between the passivationlayer and the wiring structure.

According to some embodiments, a method for manufacturing asemiconductor device structure includes the following steps, providing asubstrate having a device embedded therein; forming a wiring structurecomprising at least one contact and metal interconnection patternsrespectively formed in different dielectric layers on the substrate,wherein the at least one contact and the metal interconnection patternsare electrically connected; and forming a passivation layer havingmicrostructures on the substrate, a first side of the passivation layercomprising the microstructures, a second side of the passivation layerbeing a continuous flat plane and opposite to the first side, whereineach of the microstructures has a cross-section in a shape of atriangle, trapezoid or arc, and the substrate is located between thepassivation layer and the wiring structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device structure for sensing anincident light, comprising: a substrate having a device embeddedtherein; a passivation layer, disposed on the substrate, wherein thepassivation layer has a first side and a second side opposite to thefirst side, the first side of the passivation layer comprises aplurality of microstructures disposed on the substrate, and the secondside of the passivation layer is a continuous flat plane, wherein eachof the microstructures has a cross-section in a shape of a triangle,trapezoid or arc; and a wiring structure, disposed on the substrate,wherein the writing structure comprises at least one contact and metalinterconnection patterns respectively formed in different dielectriclayers, and the at least one contact and the metal interconnectionpatterns are electrically connected, wherein the substrate is locatedbetween the passivation layer and the wiring structure.
 2. Thesemiconductor device structure as claimed in claim 1, wherein the atleast one contact is electrically connected to the device.
 3. Thesemiconductor device structure as claimed in claim 1, wherein thepassivation layer includes a plurality of passivation layers and atleast two passivation layers of the plurality of passivation layers havethe microstructures, and the microstructures of the at least twopassivation layers are stacked on top of each other.
 4. Thesemiconductor device structure as claimed in claim 3, wherein thepassivation layers are stacked in a stacking direction, and themicrostructures of the at least two passivation layers are aligned witheach other in the stacking direction.
 5. The semiconductor devicestructure as claimed in claim 3, wherein the passivation layers arestacked in a stacking direction, and the microstructures of the at leasttwo passivation layers are alternately aligned with each other in thestacking direction, wherein a convex portion of the microstructure ofone of the at least two passivation layers is aligned with a concaveportion of the microstructure of other one of the at least twopassivation layers.
 6. The semiconductor device structure as claimed inclaim 1, further comprising: an antireflective layer, coated on thepassivation layer and overlapped with the microstructures.
 7. Thesemiconductor device structure as claimed in claim 1, wherein at leastone of the microstructures has a height of greater than λ/2.5, and apitch between any two most adjacent ones of the microstructures isgreater than λ/2, and λ represents a wavelength of the incident light.8. The semiconductor device structure as claimed in claim 1, wherein thedevice comprises a pixel, a single-photon avalanche diode, a photodiode, a photo transistor, a time of flight camera, a photo gate, apinned photo diode, or a combination thereof.
 9. The semiconductordevice structure as claimed in claim 1, wherein the microstructures arecomprised in at least one region of the first surface overlapped withthe device.
 10. The semiconductor device structure as claimed in claim1, further comprising: micro lens, arranged into an array and on themicrostructures of the passivation layer.
 11. A semiconductor devicestructure for sensing an incident light, comprising: a substrate havingat least one light sensing region with a light sensing device formedtherein; a passivation layer, disposed on the substrate, wherein a firstside of the passivation layer comprises a plurality of microstructurescovering the substrate and overlapped with the at least one lightsensing region, and a second side of the passivation layer is acontinuous flat plane, wherein the first side is opposite to the secondside, and each of the microstructures has a cross-section in a shape ofa triangle, trapezoid or arc; and a wiring structure, disposed on thesubstrate, wherein the writing structure comprises at least one contactand metal interconnection patterns respectively formed in differentdielectric layers, and the at least one contact and the metalinterconnection patterns are electrically connected, wherein thesubstrate is located between the passivation layer and the wiringstructure.
 12. The semiconductor device structure as claimed in claim11, wherein the at least one contact is electrically connected to thedevice.
 13. The semiconductor device structure as claimed in claim 11,wherein at least one of the microstructures has a height of greater thanλ/2.5, and a pitch between any two most adjacent ones of themicrostructures is greater than λ/2, and λ represents a wavelength ofthe incident light.
 14. A method for manufacturing a semiconductordevice structure, comprising: providing a substrate having a deviceembedded therein; forming a wiring structure comprising at least onecontact and metal interconnection patterns respectively formed indifferent dielectric layers on the substrate, wherein the at least onecontact and the metal interconnection patterns are electricallyconnected; and forming a passivation layer having microstructures on thesubstrate, a first side of the passivation layer comprising themicrostructures, a second side of the passivation layer being acontinuous flat plane and opposite to the first side, wherein each ofthe microstructures has a cross-section in a shape of a triangle,trapezoid or arc, and the substrate is located between the passivationlayer and the wiring structure.
 15. The method as claimed in claim 14,wherein the step of forming the passivation layer having themicrostructures comprises forming a plurality of passivation layers eachhaving the microstructures.
 16. The method as claimed in claim 15,wherein the plurality of the passivation layers are formed to stack oneach other, where the microstructures of the passivation layers areformed to be aligned with each other in a stacking direction of thepassivation layers, and a convex portion of each microstructure of onepassivation layer is aligned with a convex portion of eachmicrostructure of an immediately overlying or underlying one of thepassivation layers while a concave portion of each microstructure of onepassivation layer is aligned with a concave portion of eachmicrostructure of an immediately overlying or underlying one of thepassivation layers.
 17. The method as claimed in claim 15, wherein theplurality of the passivation layers are formed to stack on each other,where the microstructures of the passivation layers are formed to bealternately aligned with each other in a stacking direction of thepassivation layers, and a convex portion of each microstructure of onepassivation layer is aligned with a concave portion of eachmicrostructure of an immediately overlying or underlying one of thepassivation layers.
 18. The method as claimed in claim 14, furthercomprising: coating an antireflective layer on the passivation layer andoverlapped with the microstructures.
 19. The method as claimed in claim14, wherein the step of forming the passivation layer having themicrostructures comprises at least performing a photolithography processand an etching process.
 20. The method as claimed in claim 14, whereinthe step of forming the passivation layer having the microstructurescomprises forming the microstructures at the first side of thepassivation layer over a light sensing region, wherein the device is alight sensing device located within the light sensing region.